Part Number Hot Search : 
SSC9512 M62499 ERJXGNJ1 0805C MC10137 WM8987 2SA1618 3DD130
Product Description
Full Text Search
 

To Download FDMS2380 Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
 FDMS2380 Dual Integrated Solenoid Driver
August 2007
FDMS2380
Dual Integrated Solenoid Driver Features
5A, 60V Load Clamp rDS(ON) = 30m (Typ.) Excitation path 6V to 26V Operation CMOS Compatible Soft Short Detection Thermal Shutdown Diagnostic Output Integrated Clamps Over-current Protection Open Load Detection Over-voltage Protection
Pin 1
General Description
The FDMS2380 is an intelligent low side driver with built in recirculation and demagnetization circuits designed specifically for driving inductive loads. The inputs are CMOS compatible. A separate diagnostic signal for each channel provides the system with an indication of the operation of the solenoid or the presence of a protection fault condition. Built-in Over-voltage, Over-current, Overtemperature circuits protect the device from these conditions. Additional diagnostic circuitry is included for detecting Open Load, Under-voltage and output ground fault conditions. The FDMS2380 contains two independent intelligent low side solenoid drivers.
Applications
Transmission Solenoid Driver Inductive Load Management
Power QFN
Internal Logical Block Diagram (One of two Identical Channels)
VBATT
Volt Regulator & Over / Under Voltage Detect Soft Short & Recirculation INA Control Logic INB Over Temp Shutdown
PDMOS Driver & Clamp
Power PDMOS Recirculation Device
OUT Open Load Detect
Power NDMOS
DIAG Diagnostic Control & Pulse Generation
Over Current Shutdown
NDMOS Driver
Excitation Device
GND
(c)2007 Fairchild Semiconductor Corporation FDMS2380 Rev. A
1
www.fairchildsemi.com
FDMS2380 Dual Integrated Solenoid Driver
Pin Assignment
OUT2 GND2
1 18 17 2
OUT2 INA2 INB2 DIAG2 OUT2 VBATT OUT1 GND1 OUT1
OUT2
16 15
OUT2 VBATT OUT1 DIAG1 INB1 INA1 OUT1
3
14
4
VBATT
13
5 6 7 8 9
12
OUT1
11
10
TOP VIEW
Pin Description
QFN Pin 1, 3, 14, 18, pad OUT2 2 4, 13, pad VBATT 5, 9, 10, 12, pad OUT1 6 7 8 11 15 16 17 Pin Name OUT2 GND2 VBATT OUT1 DIAG1 INB1 INA1 GND1 DIAG2 INB2 INA2 Power Driver Output (Ch2) Ground (Ch2) Battery Supply Voltage. Battery supply is common to both channels Power Driver Output (Ch1) Diagnostic Flag (Ch1). Open drain output. Input Control Signal B (Ch1) Input Control Signal A (Ch1) Ground (Ch1) Diagnostic Flag (Ch2). Open drain output. Input Control Signal B (Ch2) Input Control Signal A (Ch2) Pin Description
2 FDMS2380 Rev. A
www.fairchildsemi.com
FDMS2380 Dual Integrated Solenoid Driver
Maximum Ratings TC = 25C unless otherwise noted
Symbol IOUT(rev) VBATT(max) IIN VIN(max) IDIAG VDIAG(max) PD TJ, TSTG Parameter Maximum Reverse Output Current Maximum DC Supply Voltage (Note 2) Input Currents Maximum Input Voltage Diagnostic Output Current Maximum Diagnostic Output Voltage Total Power dissipation Power dissipation VBATT pad Power dissipation OUT pads: PD(OUT) = PD(OUT1) + PD(OUT2) Operating and Storage Temperature Ratings -4 60 10 8 10 8 7 2.3 4.6 -40 to 160 Units A V mA V mA V W W W
oC
Thermal Characteristics
RJC RJC RJA RJA Thermal Resistance Junction to Case: OUT pad Thermal Resistance Junction to Case: VBATT pad Thermal Resistance Junction to Ambient: OUT pad (Note 1) Thermal Resistance Junction to Ambient: VBATT pad (Note 1) 3.5 4.0 60 60
oC/W oC/W oC/W oC/W
Ordering Information
Part Number FDMS2380
Notes: 1. RJA is measured with 1.0 in2 copper on FR-4 board. RJC is guaranteed by design while RJA is determined by the user's board design. 2. The FDMS2380 requires one or more high quality local bypass capacitors (i.e., low ESL, low ESR and located physically close to the VBATT/Ground terminals of the device) to prevent fast transients on the VBATT line from affecting the operation of the device. More specifically, the bypass scheme must reduce transients with an amplitude passing through VBATT(ov) to have a rise time of less than 2.2V/s.
Package 18 pin QFN
Packing Method Tape & Reel
Reel Size 330mm
Tape Width 24mm
Quantity 2000
3 FDMS2380 Rev. A
www.fairchildsemi.com
FDMS2380 Dual Integrated Solenoid Driver
Electrical Characteristics TC = 25C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
VBATT(Oper) Operating Supply Voltage ISQ ILK Supply Quiescent Current Output Leakage Current --VBATT = 13V, VINA = VINB = 5V VBATT = 18V, VINA = VINB = 1.5V 6.0 14.0 9.3 0.2 26.0 15 5 V mA mA
On Characteristics
rDS(ON) VRecir(sat) On Resistance - Excitation Path Saturation Voltage - Recirculation Path VBATT = 13V, VINA = VINB = 5V, IOUT = 5A TC = 150oC VBATT = 13V, VINA = 5V, VINB = 0V, IOUT = 10A 0.030 0.050 1.4 0.080 0.100 1.8 V
Switching Characteristics (Excitation Path)
td(ON) td(OFF) tr tf Output Turn-On Delay Time Output Turn-Off Delay Time Rise Time Fall Time VBATT = 14V, RLoad = 2.5 7.0 8.3 6.5 3.0 30 30 10 10 s s s s
Logic Input Characteristics
VIL VIH VCL IIN Input Low Level Voltage Input High Level Voltage Input Clamp Voltage Input Current (each input) IIN <=10mA VINA = VINB = 5V VINA = VINB = 1.5V ----3.5 5.5 20 90 60 1.5 160 V V V A A
Protection and Diagnostics Characteristics (Note 1)
TJ(tsd) IOUT(trip) VBATT(ov) VBATT(uv) IOUT(ol) VOUT(SS) RSS TSS VOUT(cl1) VOUT(cl2) VFB td(DIAG) Thermal Shut-down Junction Temperature Output Current Trip Over-voltage Threshold Under-voltage Threshold Open Load Detect Current Soft Short Detect Voltage Soft Short Resistance Soft Short Active Time NDMOS Over-voltage Clamp Output Inductive Clamp Voltage Flyback Diagnostic Threshold Voltage (VOUT - VBATT ) Diagnostic Propagation Delay Time --------VINA = 5V, VINB = falling edge INA=0, INB=1, VBATT - VOUT INA=0, INB=1, from VOUT to VBATT INA=0, INB=1, time RSS is active Ref to GND; IOUT = 5A VOUT - VBATT; IOUT = 5A Threshold where DIAG goes low during Fast turn-off Mode Fast turn-off Mode; VDIAG = 1V --Over-voltage, Under-voltage, Over-current, Over-temperature IDIAG <= 1mA, Diagnostic output active IDIAG <= 10mA 160 15 27 300 0.3 50 1 60 27 22 26 2 5.5 172 20 29 5.1 450 0.43 75 73 30 23 3 42 7 185 30 32 5.5 800 0.6 140 3 85 33 33 10 50 10 0.9 oC
A V V mA V ms V V V s s s V V
tDAIGFB(min) Minimum Diagnostic Flyback Time tDIAG(prot) VDIAG(low) VDIAG(cl) Protection Diagnostic Pulse Width Diagnostic Voltage Low Diagnostic Output Clamp Voltage
Notes: 1. Integrated protection functions, as described in this data sheet, are designed to prevent the destruction of the IC and these fault conditions are considered `outside' the normal operating ranges. It is important to note that the protection functions integrated into this device are NOT designed for continuous repetitive operation.
4 FDMS2380 Rev. A
www.fairchildsemi.com
FDMS2380 Dual Integrated Solenoid Driver
Normal operation (see figure 1)
STANDBY MODE, INA = INB = 0 In the Standby mode, INA and INB are in the logic low state and there is no output current flow through solenoid coil. Both the PDMOS and NDMOS output power transistors are in their off state. This is the condition either at the start of a cycle to activate the solenoid or after a flyback signal has been generated. EXCITATION MODE, INA = INB = 1 In the Excitation mode, INA and INB are in the logic high state and the NDMOS power transistor is turned on to sink current through the coil connected to the positive supply. The output current rises in this condition until limited by either the coil resistance or the FDMS2380 if the current reaches the output current trip level IOUT(trip) in which case the FDMS2380 will turn off the NDMOS and issue a protection diagnostic signal. RECIRCULATION MODE, INA = 1, INB = 0 The Recirculation mode normally follows the Excitation mode. In this mode the NDMOS is turned off and the PDMOS is on. The current in the coil, connected to the output, is recirculated to the positive power supply pin through the low impedance path of the recirculation diode and the PDMOS transistor. In the Recirculation mode the coil current IOUT slowly decays due to the impedance of the inductive load and the forward voltage drop across the FDMS2380 recirculation path. The FDMS2380 will also enter the Recirculation mode during over-voltage, over-current, and over-temperature conditions as a means to limit the power dissipation in the device. FAST TURN-OFF MODE, INA -> 0 The fast turn-off mode is initiated whenever the INA pin transitions from a logic high to low state with INB also in a logic low state. In this mode the output voltage "flies back" to VBATT+VOUT(cl2) where it is clamped by the FDMS2380 and the coil current is recirculated through the device back to the VBATT supply. The larger amplitude flyback voltage causes the coil current to rapidly discharge shutting off the solenoid. This flyback condition shall last as long as the output voltage is greater then VBATT and less then VOUT(cl1). During this time, the output diagnostic pin DIAG is driven low for the duration of the flyback pulse. Any output flyback pulses which are less then the period tDIAGFB(min) will have its corresponding diagnostic pulse lengthened to a minimum of tDIAGFB(min) to help identify the flyback condition from a possible protection diagnostic fault. If an under-voltage condition exists the flyback diagnostic pulse will be blocked, however, a flyback diagnostic pulse is generated if the flyback condition is still present at the end of the under-voltage condition. For inputs INA and INB in the logic low state the NDMOS and PDMOS transistors will be off. Exceptions to this condition are; during an alternator load dump event that could drive the output to greater then VOUT(cl1) the NDMOS will clamp the output voltage, and during a flyback event the PDMOS will clamp the output to VOUT(cl2). Using the curves from figures 7 through 12, the driving parameters (e.g., maximum duty cycle, etc.) and/or the solenoid characteristics (e.g., coil resistance or coil inductance) must be checked to ensure the FDMS2380 is not damaged by SCIS (self-clamped inductive switching) related overstress. SOFT SHORT TEST MODE, INA = 0 INB = 1 This test mode is used for detecting an output ground fault. The Soft Short mode is initiated any time INA=0 and INB=1 when in the Standby mode. The input conditions need to be held for a minimum of 2 ms to allow for the timing of the Soft Short detection circuit. After this setup time the FDMS2380 switches in a resistance (RSS) of approximately 75 ohms between VBATT and the output (OUT) pin. This resistance, connected in parallel to the load, acts as an additional pullup impedance to the positive power supply. To minimize power dissipation in the event of an output ground fault, the output pull-up resistor, activated in the Soft Short mode, is only switched on for a period of Tss by the FDMS2380. Regardless if the INA and INB signals remain in the Soft Short state for a longer period of time. Immediately prior to the end of this period, the output voltage VOUT is compared to the VBATT supply voltage and if the difference is greater then VOUT(ss) the diagnostic pin DIAG is pulled low. The diagnostic pin will stay activated until the Soft Short mode is terminated by a change of the INA or INB inputs. To minimize the power dissipation the Soft Short test mode should not be restarted sooner than 10 ms after a previous Soft Short test.
Self-Protection Functions
Refer to figures 2 through 6 for self-protection waveforms. All self-protection modes except over-voltage and undervoltage are reset when INA goes to logic 0. When a selfprotection condition is detected the FDMS2380 will issue a protection fault on the diagnostic pin. This fault condition is signaled by a 2 s to 10 s pulse tDIAG(prot) on the diagnostic pin DIAG. If the INA pin is activated while the condition setting the protection fault is still active additional protection fault diagnostic pulses will be issued. Current Trip (see figure 2) Anytime during Excitation mode, if the current in the NDMOS rises above the IOUT(trip) level, the FDMS2380 will turn off the NDMOS and enter into the Recirculation mode and issue a 2 s to 10 s protection fault pulse on the diagnostic pin DIAG. The device will remain in this Recirculation mode as long as the INA pin remains high and is terminated with the falling edge of INA. Thermal Shutdown (see figure 3) The FDMS2380 is internally protected against over-temperature conditions by a temperature sensing circuit. When the FDMS2380 junction temperature exceeds the protection limit, TJ(tsd), thermal shutdown of the device will occur. Upon entering thermal shutdown a 2 s to 10 s protection fault signal is activated in the DIAG pin. In thermal shutdown, the NDMOS is switched off and the FDMS2380 operates in recirculation to discharge the energy in the load coil and minimize power dissipation. The FDMS2380 will remain in this state until INA is taken to logic 0. A protection fault signal will be issued each time INA is brought to a logic high while the overtemperature conditions exists.
5 www.fairchildsemi.com
FDMS2380 Rev. A
FDMS2380 Dual Integrated Solenoid Driver
Overvoltage (see figure 4) While in the Excitation mode if the VBATT pin rises above the over-voltage threshold, VBATT(ov), the FDMS2380 is forced into the Recirculation mode and a protection fault signal on the diagnostic pin DIAG is generated. This condition is not reset by INA going low but by the voltage of the VBATT pin returning below the VBATT(ov) level. A protection fault pulse will be issued each time the device is driven into the Excitation state while the over-voltage condition exists. The FDMS2380 is designed with a fast responding overvoltage circuit that disables the output slope control circuit which minimizes radiated EMI. However, voltage transitions on the VBATT pin which exceed 30 volts above the battery need to be limited to a rise time no faster then 2.2 V/s through the use of a power supply bypass capacitor. Undervoltage (see figure 6) The FDMS2380 will operate down to a minimum voltage of VBATT(uv). If the battery supply drops below this minimum voltage the device is forced into the Standby mode. If INA is high during this condition a 2 s to 10 s protection fault pulse is issued on the diagnostic DIAG pin. In addition, a diagnostic pulse will be generated each time INA transitions from a low to a high logic level while remaining in this under-voltage condition. The FDMS2380 will return to normal operation when VBATT is 6 volts or greater.
Diagnostic Functions
Open Load Detect (see figure 5) While INA and INB are high, if the load current fails to rise above the open load current level, IOUT(ol), before INB transitions low an open load diagnostic fault will be issued. The diagnostic pin will be driven low on the falling edge of the INB signal and remain low until INA is returned to a logic 0 condition. The open load detect mechanism senses current flowing through the NDMOS at the falling edge of the INB signal. If an open load condition exists during the Excitation phase but is corrected before the INB falling edge the open load condition would not be detected and the open load diagnostic fault would not be generated. The open load detection circuit does not alter the operation of the FDMS2380 and the PDMOS and NDMOS output transistors will be driven into the operational modes as commanded by the INA and INB inputs. If during the detection of the open load condition a protection fault condition also arises, the open load diagnostics will be terminated and then after a 2 s to 10 s blanking period the protection diagnostic will be generated.
Operational Truth Table
Conditions Standby Mode: Soft Short Test Mode Excitation Mode: (No protection faults) Recirculation Mode Fast Turn-off Mode: VFB < VOUT < VOUT(cl1) Alternator Load Dump: VOUT > VOUT(cl1) Thermal Shutdown: TJ > TJ(tsd) Current Trip: IOUT > IOUT(trip) Overvoltage: VBATT > VBATT(ov) Undervoltage: VBATT < VBATT(uv) Open Load: IOUT < IOUT(ol) refer to Open Load waveforms (Figure 5) INA L L H H L L H H H H INB L H H L L X X H H X NDMOS OFF OFF ON OFF OFF PDMOS OFF ON ON ON VOUT clamped to VOUT(cl2)
NDMOS in UIS NA operation OFF OFF OFF OFF ON ON ON OFF -
H = High, L = Low, X = Don't Care General operation INA and INB are standard logic inputs that control Standby, Excitation, Recirculation, Diagnostics, and Fast turn-off modes in the FDMS2380.
6 FDMS2380 Rev. A
www.fairchildsemi.com
FDMS2380 Dual Integrated Solenoid Driver
Typical Characteristics TC = 25C unless otherwise noted
INA INB DIAG
tDAIGFB
VBATT+VOUT(cl2) VFB
OUT Voltage
Recirculation Fast Turn Off
IOUT Load Current
Excitation
Figure 1. Normal Operation
INA INB DIAG
2 to 10 s protection fault signal
OUT Voltage
Protection Recirculation IOUT(Trip)
NDMOS turned off & PDMOS on -- forces device into Recirculation mode to dissipate the inductive energy. Operates in Recirculation mode for as long as INA is high NDMOS can not turn back on until rising edge of INA
IOUT Load Current Excitation Figure 2. Current Trip
7 FDMS2380 Rev. A
www.fairchildsemi.com
FDMS2380 Dual Integrated Solenoid Driver
Typical Characteristics TC = 25C unless otherwise noted
INA INB DIAG
protection fault signal
OUT Voltage
PDMOS ONOFF NDMOS ONOFF Protection Recirculation TJ(tsd)
NDMOS turned off & PDMOS on -- forces device into Recirculation mode to dissipate the inductive energy. Operates in Recirculation mode for as long as INA is high NDMOS can not turn back on until rising edge of INA
TJ Excitation Figure 3. Thermal Shutdown INA INB DIAG
protection fault signal
VBATT(ov) VBATT
Exits over-voltage protection condition & resumes normal operation
OUT Voltage Fast Turn Off
IOUT Load Current
NDMOS turned off & PDMOS on to force device into Recirculation
Excitation
Figure 4. Over-Voltage
8 FDMS2380 Rev. A
www.fairchildsemi.com
FDMS2380 Dual Integrated Solenoid Driver
Typical Characteristics TC = 25C unless otherwise noted
INA INB DIAG
latched low on falling edge of INB reset on falling edge of INA
OUT Voltage Open load condition IOUT < IOUT(ol) Fast Turn Off
IOUT
Load Current
IOUT(ol)
Threshold
Excitation
Recirculation Figure 5. Intermittent Open Load
INA
INB
DIAG
protection fault signal INA low, DIAG pulse not issued
Exits Standby mode & resumes normal operation
VBATT VBATT(uv)
Goes into Standby mode - PDMOS & NDMOS turned off
Figure 6. Under-Voltage
9 FDMS2380 Rev. A
www.fairchildsemi.com
FDMS2380 Dual Integrated Solenoid Driver
Typical Characteristics
ESCIS, SELF CLAMPED INDUCTIVE SWITCHING ENERGY (mJ) 160 Single Pulse VBatt = 14V 140
TC = 25C unless otherwise noted
ESCIS, SELF CLAMPED INDUCTIVE SWITCHING ENERGY (mJ) 220 200 180 160 140 120 100 80 60 40 0 TJ = 150oC TJ = 25oC Single Pulse VBatt = 14V
TJ = 25oC 120
100
TJ = 150oC
80
60
40 0
2
4
6
8
10
10
20
30
40
50
L, INDUCTANCE (mH)
L, INDUCTANCE (mH)
Figure 7. Self Clamped Inductive Switching Energy vs Inductance
ISCIS, SELF CLAMPED INDUCTIVE SWITCHING Current (A) 15 Single Pulse VBatt = 14V 12
Figure 8. Self Clamped Inductive Switching Energy vs Inductance
ISCIS, SELF CLAMPED INDUCTIVE SWITCHING Current (A) 15 Single Pulse VBatt = 14V 12
9
9 TJ = 25oC 6 TJ = 150oC 3 0 2 4 6 8 10 L, INDUCTANCE (mH)
6 TJ = 25oC 3 TJ = 150oC 0 0 10 20 30 40 50 L, INDUCTANCE (mH)
Figure 9. Self Clamped Inductive Switching Current vs Inductance
ISCIS, SELF CLAMPED INDUCTIVE SWITCHING Current (A) 20
Figure 10. Self Clamped Inductive Switching Current vs Inductance
80 IOUT = 5A VOUT, OUTPUT CLAMP VOLTAGE (V) 70 NDMOS Over-voltage Clamp (ref to gnd)
Single Pulse VBatt = 14V 10 STARTING TJ = 25oC
60
50
40 Output Inductive Clamp Voltage (VOUT - VBATT) 30
STARTING TJ = 150oC 1 0.1 1 tCLP, TIME IN CLAMP (ms) 10
20 -40
0
40
80
120
160
TC , CASE TEMPERATURE (oC)
Figure 11. Self Clamped Inductive Switching Current vs Time in Clamp
Figure 12. Output Clamp Voltage vs Case Temperature
10 FDMS2380 Rev. A
www.fairchildsemi.com
FDMS2380 Dual Integrated Solenoid Driver
Typical Characteristics (Continued) TC = 25C unless otherwise noted
1.4 VBATT = 13V NORMALIZED EXCITATION PATH ON RESISTANCE IOUT, OUTPUT CURRENT (A) IOUT = 5A VINA = VINB = 5V 1.2 12 15 VBATT = 13V VINA = 5V VINB = 0V
9
6 TJ = 150oC 3 TJ = 25oC
1.0
0.8 -40
0 0 40 80
o
120
160
0.6
0.8
1.0
1.2
1.4
1.6
1.8
TC , CASE TEMPERATURE ( C)
VRecir(SAT), RECIRCULATION PATH SATURATION VOLTAGE (V)
Figure 13. Normalized Excitation Path On Resistance vs Case Temperature
1.54 VRecir(SAT), RECIRCULATION PATH SATURATION VOLTAGE (V) IOUT = 10A 1.52 VINA = 5V VINB = 0V
Figure 14. Output Current vs Recirculation Path Saturation Voltage
30 IOUT(trip), OUTPUT CURRENT TRIP (A)
VBATT = 13V
VINA = 5V
25
1.50
20
1.48
15
1.46 -40
0
40
80
120
160
10 -40
0
40
80
120
160
TC , CASE TEMPERATURE (oC)
TC , CASE TEMPERATURE (oC)
Figure 15. Recirculation Path Saturation Voltage vs Case Temperature
700 Iol, OPEN LOAD DETECT CURRENT (mA) VINA = 5V VINB = Falling Edge 600 IIN, INPUT CURRENT (A)
Figure 16. Output Current Trip vs Case Temperature
120 Single Channel
100 VINA = VINB = 5V 80 VINA = VINB = 1.5V 60
500
400
300 -40
0
40
80
120
160
40 -40
0
40
80
120
160
TC , CASE TEMPERATURE (oC)
TC , CASE TEMPERATURE (oC)
Figure 17. Open Load Detect Current vs Case Temperature
Figure 18. Input Current vs Case Temperature
11 FDMS2380 Rev. A
www.fairchildsemi.com
FDMS2380 Dual Integrated Solenoid Driver
Typical Characteristics (Continued) TC = 25C unless otherwise noted
240 ILK, OUTPUT LEAKAGE CURRENT (A) ISQ, SUPPLY QUIESCENT CURRENT (mA) VBATT = VOUT = 18V VINA = VINB = 1.5V Single Channel 12 VINA = VINB = 5V VBATT = VOUT = 13V
220
9
200
6
180
3 VINA = VINB = 0V
160 -40
0 0 40 80 120 160 -40 0 40 80 120 160 TC , CASE TEMPERATURE (oC) TC , CASE TEMPERATURE (oC)
Figure 19. Output Leakage Current vs Case Temperature
Figure 20. Supply Quiescent Current vs Case Temperature
Typical Application Circuit
The following schematic of an FDMS2380 used in a basic application is just one of several possible variations for this device. It shows two external and independent controllers, one for each channel, and two solenoids being controlled by the FDMS2380. Furthermore, it shows the external local VBATT bypass capacitor, the details of which are discussed in the Maximum Ratings section. The FDMS2380 ground pins GND1 and GND2 are fully isolated; therefore, they are normally connected together on the PCB. When designing the PCB for the FDMS2380 the user needs to provide as low a thermal impedance as is possible for both the VBATT and OUT[1,2] paddles on the bottom of the package. The power density in the dual integrated solenoid driver can be quite large and care should be taken to optimize the thermal impedance of the system to maximize the power handling capability of the device while minimizing the maximum operating temperature.
V batt
V batt
V batt
+5V
4,13 & Pad Vbatt
L1
L2
+5V
10K
& 18 4 , u t2 1 3, d O 1 , Pa
DIAG1 Controller I
8 INA1 INB1 7
FDMS2380 DISD
GND1 11 GND2 2
17 16
INA2 INB2
12 FDMS2380 Rev. A
ControllerII
www.fairchildsemi.com
& 2 , 1 t1 10 u 9, d O 5 , Pa
10K
6
OUT1
V batt
OUT2
15
DIAG2
FDMS2380 Dual Integrated Solenoid Driver
Tape and Reel Specifications
Tape Dimensions:
T
User Direction of Feed
P0 D0
Aug-2006, Rev. B
E1
F K0 Wc B0 E2 W
Tc A0 P1 Dimensions are in millimeter Pkg. Type 18 pin QFN A0 8.35 +/-0.10 B0 12.35 +/-0.10 W 24.0 +/-0.3 D0 1.50 +0.10/-0.0 D1 1.50 min E1 1.75 +/-0.10 E2 22.25 min F 11.50 +/-0.10 P1 16.0 +/-0.1 P0 4.0 +/-0.1 K0 2.40 +/-0.10 T 0.30 +/-0.05 Wc 21.3 +/-0.1 Tc 0.10 max D1
Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481 rotational and lateral movement requirements.
10 deg maximum component rotation
Component Rotation (Side Sectional View) Package Orientation
Reel Dimensions:
W1 Measured at Hub
B Min Dim C Dim A max
Dim N
Dim D min
DETAIL AA
See detail AA W3
13" Diameter Option
W2 max Measured at Hub
Dimensions are in inches and millimeters
Tape Size 24 mm Reel Option 13" Dia Dim A 13.00 330 Dim B 0.079 2.0 Dim C 0.512 13 0.0008 0.20 Dim D 0.819 20.8 Dim N 4.00 100 Dim W1 0.960 + 0.078/-0 24.4 + 2/-0 Dim W2 1.12 28.4 Dim W3 (LSL-USL) 0.941 - 1.079 23.9 - 27.4
13 FDMS2380 Rev. A
www.fairchildsemi.com
FDMS2380 Dual Integrated Solenoid Driver
Physical Dimensions
14 FDMS2380 Rev. A
www.fairchildsemi.com
TRADEMARKS The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx(R) Build it NowTM CorePLUSTM CROSSVOLTTM CTLTM Current Transfer LogicTM EcoSPARK(R)
(R)
Fairchild(R) Fairchild Semiconductor(R) FACT Quiet SeriesTM FACT(R) FAST(R) FastvCoreTM FPSTM FRFET(R) Global Power ResourceSM
Green FPSTM Green FPSTM e-SeriesTM GTOTM i-LoTM IntelliMAXTM ISOPLANARTM MegaBuckTM MICROCOUPLERTM MicroFETTM MicroPakTM MillerDriveTM Motion-SPMTM OPTOLOGIC(R) OPTOPLANAR(R)
(R)
PDP-SPMTM Power220(R)
Power247(R) POWEREDGE(R) Power-SPMTM PowerTrench(R) Programmable Active DroopTM QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM SMART STARTTM SPM(R) STEALTHTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6
SuperSOTTM-8 SyncFETTM The Power Franchise(R)
TinyBoostTM TinyBuckTM TinyLogic(R) TINYOPTOTM TinyPowerTM TinyPWMTM TinyWireTM SerDesTM UHC(R) UniFETTM VCXTM
DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Preliminary Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor. The datasheet is printed for reference information only.
Rev. I31
2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
No Identification Needed
Full Production
Obsolete
Not In Production
(c) 2007 Fairchild Semiconductor Corporation
www.fairchildsemi.com


▲Up To Search▲   

 
Price & Availability of FDMS2380

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X